Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
Identifieur interne : 001018 ( Chine/Analysis ); précédent : 001017; suivant : 001019Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
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Abstract
Surface-recombination-free InGaAs/lnP HBTs with graded base have been demonstrated. The HBTs were passivated by ammonium sulfide. The current gain of the nonself-aligned HBTs was independent of the emitter periphery, indicating that the surface recombination was removed by the passivation. For the self-aligned HBTs, the current gain was still dependent on the emitter periphery after the passivation due to the base contact recombination. A surface leakage channel has been identified to result in a significant increase in the base contact recombination. The passivation has two effects: one is the surface recombination velocity reduction and the other is the surface leakage channel elimination.
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Liu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Microwave IC Department, Institute of Microelectronics, Chinese Academy of Sciences, No. 3, Beitucheng West Road</s1><s2>Beijing 100029</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>République populaire de Chine</country><placeName><settlement type="city">Pékin</settlement></placeName></affiliation></author><author><name sortKey="Prost, W" uniqKey="Prost W">W. Prost</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Solid-State Electronics, University Duisburg-Essen, Lotharstrasse 55, ZHO</s1><s2>Duisburg 47048</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>47048</wicri:noRegion><wicri:noRegion>ZHO</wicri:noRegion><wicri:noRegion>Duisburg 47048</wicri:noRegion></affiliation></author><author><name sortKey="Tegude, F J" uniqKey="Tegude F">F.-J. Tegude</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Solid-State Electronics, University Duisburg-Essen, Lotharstrasse 55, ZHO</s1><s2>Duisburg 47048</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>47048</wicri:noRegion><wicri:noRegion>ZHO</wicri:noRegion><wicri:noRegion>Duisburg 47048</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0325188</idno><date when="2008">2008</date><idno type="stanalyst">PASCAL 08-0325188 INIST</idno><idno type="RBID">Pascal:08-0325188</idno><idno type="wicri:Area/Main/Corpus">006795</idno><idno type="wicri:Area/Main/Repository">005C93</idno><idno type="wicri:Area/Chine/Extraction">001018</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-1101</idno><title level="j" type="abbreviated">Solid-state electron.</title><title level="j" type="main">Solid-state electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compound</term><term>Current gain</term><term>Heterojunction bipolar transistors</term><term>Indium phosphide</term><term>Passivation</term><term>Self aligned technology</term><term>Surface recombination</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Recombinaison superficielle</term><term>Transistor bipolaire hétérojonction</term><term>Gain courant</term><term>Passivation</term><term>Technologie autoalignée</term><term>Phosphure d'indium</term><term>Composé binaire</term><term>InP</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Surface-recombination-free InGaAs/lnP HBTs with graded base have been demonstrated. The HBTs were passivated by ammonium sulfide. The current gain of the nonself-aligned HBTs was independent of the emitter periphery, indicating that the surface recombination was removed by the passivation. For the self-aligned HBTs, the current gain was still dependent on the emitter periphery after the passivation due to the base contact recombination. A surface leakage channel has been identified to result in a significant increase in the base contact recombination. The passivation has two effects: one is the surface recombination velocity reduction and the other is the surface leakage channel elimination.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1101</s0></fA01><fA03 i2="1"><s0>Solid-state electron.</s0></fA03><fA05><s2>52</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Surface-recombination-free InGaAs/InP HBTs and the base contact recombination</s1></fA08><fA11 i1="01" i2="1"><s1>JIN (Z.)</s1></fA11><fA11 i1="02" i2="1"><s1>LIU (X.)</s1></fA11><fA11 i1="03" i2="1"><s1>PROST (W.)</s1></fA11><fA11 i1="04" i2="1"><s1>TEGUDE (F.-J.)</s1></fA11><fA14 i1="01"><s1>Microwave IC Department, Institute of Microelectronics, Chinese Academy of Sciences, No. 3, Beitucheng West Road</s1><s2>Beijing 100029</s2><s3>CHN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Solid-State Electronics, University Duisburg-Essen, Lotharstrasse 55, ZHO</s1><s2>Duisburg 47048</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>1088-1091</s1></fA20><fA21><s1>2008</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888</s2><s5>354000197895520170</s5></fA43><fA44><s0>0000</s0><s1>© 2008 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0325188</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid-state electronics</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Surface-recombination-free InGaAs/lnP HBTs with graded base have been demonstrated. The HBTs were passivated by ammonium sulfide. The current gain of the nonself-aligned HBTs was independent of the emitter periphery, indicating that the surface recombination was removed by the passivation. For the self-aligned HBTs, the current gain was still dependent on the emitter periphery after the passivation due to the base contact recombination. A surface leakage channel has been identified to result in a significant increase in the base contact recombination. 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